RESIDUAL FILM MONITORING DEVICE, POLISHING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2003/103898

A1

A light beam from a white light source (404) is reflected from a white diffusing reflective plate (403) and diffused to illuminate substantially the whole surface to be polished of a wafer (Wm) chucked by a chuck substantially uniformly. The bright-field image of the whole area of the wafer (Wm) illuminated with the light is formed on an imaging surface of a color CCD (401) through a taking lens (402) by the light projected onto and reflected from the wafer (Wm) and is captured by the CCD (401). A processing unit (405) outputs the result of monitoring indicating whether or not any residual film is present over the whole surface to be polished of the wafer (Wm) according to the color image information acquired form the CCD (401). Thus, a residual monitoring device for adequately monitoring the state of any polishing residual film over the whole or wide area of the surface to be polished of an object to be polished can be provided.

WAKAMIYA KOUICHI (JP)
UEDA TAKEHIKO (JP)

PCT/JP2003/006913

December 18, 2003

June 02, 2003

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NIPPON KOGAKU KK (JP)
WAKAMIYA KOUICHI (JP)
UEDA TAKEHIKO (JP)

G01B11/06; B24B37/013; B24B49/04; B24B49/12; H01L21/304; H01L21/321; (IPC1-7): B24B49/12; B24B37/04; H01L21/304

JP2001353659A	2001-12-25
JP2000183002A	2000-06-30
JPH1190816A	1999-04-06
JPH0764632A	1995-03-10
JPH10197216A	1998-07-31

Hosoe, Toshiaki (3-6 Nishikanagawa 1-Chome, Kanagawa-k, Yokohama-Shi Kanagawa, JP)

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