Title:
RESIN, INSULATING FILM AND ORGANIC FIELD EFFECT TRANSISTOR COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2023/074606
Kind Code:
A1
Abstract:
The present invention provides a resin which enables the production of an organic field effect transistor element which has excellent resistance to bias stress by being used as a gate insulating film layer for an organic field effect transistor. The present invention provides a resin which comprises a repeating unit represented by formula (1) and a repeating unit represented by formula (2), wherein: the repeating unit represented by formula (2) has a HOMO level of -6.4 eV or less; and 20% by mole or more of the repeating unit represented by formula (2) is contained relative to the total amount of the repeating unit represented by formula (1) and the repeating unit represented by formula (2).
Inventors:
IIJIMA YUTA (JP)
YUMINO SHOHEI (JP)
FUKUDA TAKASHI (JP)
SHIWAKU REI (JP)
OKU SHINYA (JP)
YUMINO SHOHEI (JP)
FUKUDA TAKASHI (JP)
SHIWAKU REI (JP)
OKU SHINYA (JP)
Application Number:
PCT/JP2022/039467
Publication Date:
May 04, 2023
Filing Date:
October 24, 2022
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
H01L21/312; C08F8/26; C08F212/14; C08F212/32; H01L29/786
Foreign References:
| JP2021050298A | 2021-04-01 | |||
| JP2019178191A | 2019-10-17 | |||
| JP2018018928A | 2018-02-01 | |||
| JP2010511094A | 2010-04-08 |
Attorney, Agent or Firm:
SEKIGUCHI Masao et al. (JP)
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