RESIST-PATTERN FORMATION METHOD AND RESIST MATERIAL

Title:

RESIST-PATTERN FORMATION METHOD AND RESIST MATERIAL

Document Type and Number:

WIPO Patent Application WO/2017/090745

Kind Code:

A1

Abstract:

A resist-pattern formation method according to the present invention includes a resist-layer formation step, a pattern exposure step, a flood exposure step, and a development step. In the resist-layer formation step, a resist layer is formed on a substrate. In the pattern exposure step, a sensitizer is generated from a sensitizer precursor in the resist layer. In the flood exposure step, the resist layer in which the sensitizer has been generated is subjected to flood exposure, whereby an acid is generated from a strong-acid generating agent. In the development step, the resist layer is developed. In the pattern exposure step, a strong acid is generated from a strong-acid generating agent, a sensitizer is generated through a reaction between the strong acid and the sensitizer precursor, a weak acid is generated through a reaction between the strong acid and a base, and a sensitizer is generated through a reaction between the weak acid and the sensitizer precursor.

Inventors:

TAGAWA SEIICHI (JP)

Application Number:

PCT/JP2016/085024

Publication Date:

June 01, 2017

Filing Date:

November 25, 2016

Export Citation:

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Assignee:

UNIV OSAKA (JP)

International Classes:

G03F7/004; G03F7/11; G03F7/20; G03F7/38

Domestic Patent References:

WO2014129556A1

2014-08-28

Foreign References:

JP2015172741A	2015-10-01
JP2011252967A	2011-12-15
JPH04363014A	1992-12-15
JP2008543033A	2008-11-27
JP2002174894A	2002-06-21

Other References: