Title:
RESIST REDISUE REMOVAL LIQUID AND METHOD FOR FORMING SUBSTRATE WITH CONDUCTOR PATTERN USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/162972
Kind Code:
A1
Abstract:
The purpose of the invention according to the present application is to provide: a resist residue removal liquid that can stably and satisfactorily remove resist residues, such as resist trailing parts occurring in the side surface of a resist pattern in the step of developing a photoresist material for circuit formation, and uncured resist deposits on the front surface of the resist pattern; and a method for forming a substrate with a conductor pattern using the resist residue removal liquid. To accomplish this purpose, the resist residue removal liquid according to the present application is composed of at least 0.01% by mass of a cyclic oligomer and the rest water. The resist residue removal liquid preferably contains 0.001–1% by mass of an alkali component.
Inventors:
HATTORI NANA (JP)
KONDO ATSUSHI (JP)
KITAI MAKOTO (JP)
KONDO ATSUSHI (JP)
KITAI MAKOTO (JP)
Application Number:
PCT/JP2021/026008
Publication Date:
August 04, 2022
Filing Date:
July 09, 2021
Export Citation:
Assignee:
MELTEX INC (JP)
International Classes:
H01L21/027; G03F7/32
Domestic Patent References:
| WO2020170632A1 | 2020-08-27 |
Foreign References:
| JP2005181814A | 2005-07-07 | |||
| JP2004246107A | 2004-09-02 | |||
| JPH0194342A | 1989-04-13 |
Attorney, Agent or Firm:
YOSHIMURA, Katsuhiro (JP)
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