Title:
RESISTANCE ELEMENT AND ELECTRICAL POWER AMPLIFIER CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2020/203505
Kind Code:
A1
Abstract:
A resistance element (100) is provided with: a substrate (101); a first nitride semiconductor layer (102); a second nitride semiconductor layer (103); a two-dimensional electron gas layer (107) provided on the first nitride semiconductor layer (102) side of an interface between the first nitride semiconductor layer (102) and the second nitride semiconductor layer (103); a first electrode (113) ohmic-contacted to the two-dimensional electron gas layer (107); a second electrode (114) ohmic-contacted to the two-dimensional electron gas layer (107); and an insulating layer provided between the first electrode (113) and the second electrode (114) in plan view. The two-dimensional electron gas layer (107) functions as an electrical resistance element, and no conductive layers are disposed above the insulating layer between the first electrode (113) and the second electrode (114) in plan view, whereby a resistance-value stabilizing structure that functions so that the resistance value of the electrical resistance element becomes constant is provided.
Inventors:
MIYAJIMA KENICHI
KATOU YOSHIAKI
NISHIO AKIHIKO
MOTOYOSHI KANAME
KATOU YOSHIAKI
NISHIO AKIHIKO
MOTOYOSHI KANAME
Application Number:
PCT/JP2020/013165
Publication Date:
October 08, 2020
Filing Date:
March 24, 2020
Export Citation:
Assignee:
PANASONIC SEMICONDUCTOR SOLUTIONS CO LTD (JP)
International Classes:
H01L27/04; H01L21/338; H01L21/822; H01L21/8232; H01L27/06; H01L29/778; H01L29/812
Domestic Patent References:
| WO2017176287A1 | 2017-10-12 |
Foreign References:
| JP2016219632A | 2016-12-22 | |||
| JP2015023098A | 2015-02-02 | |||
| JPS577463B2 | 1982-02-10 |
Other References:
See also references of EP 3817049A4
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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