Title:
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/115357
Kind Code:
A1
Abstract:
The present disclosure relates to a resistive random access memory and a manufacturing method therefor. The resistive random access memory comprises a first electrode layer, a second electrode layer and a resistive dielectric layer located between the first electrode layer and the second electrode layer, which are of a sandwich structure. The second electrode layer comprises a plurality of through holes which are filled with an electrode material, to form an annular electrode or a sawtooth electrode. Due to the fact that an electrode having a target size is disposed at a target position, the second electrode is regular, uniform and flat and has a relatively small conductive wire forming area, so that a current supply position can be effectively controlled, and a generation site of a metal cation or an oxygen defect vacancy is controlled to the maximum extent. Therefore, the generation randomness of a conductive wire is reduced, and the shape uniformity of the conductive wire is improved, so that the performance consistency of the resistive random access memory, such as the consistency of D2D and C2C, is improved.
Inventors:
LIU XIXIA (CN)
ZHOU XUE (CN)
WANG XIAOJIE (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
ZHOU XUE (CN)
WANG XIAOJIE (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2021/140220
Publication Date:
June 29, 2023
Filing Date:
December 21, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00
Domestic Patent References:
| WO2014158793A1 | 2014-10-02 |
Foreign References:
| CN111769196A | 2020-10-13 | |||
| CN112687793A | 2021-04-20 | |||
| CN111312895A | 2020-06-19 | |||
| CN110718569A | 2020-01-21 | |||
| CN103579280A | 2014-02-12 |
Attorney, Agent or Firm:
KING & WOOD MALLESONS (CN)
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