RESISTIVITY MEASURING METHOD - SHINETSU HANDOTAI KK

Title:

RESISTIVITY MEASURING METHOD

Document Type and Number:

WIPO Patent Application WO/2018/105336

Kind Code:

A1

Abstract:

The present invention provides a resistivity measuring method comprising: a mercury electrode forming step of forming a mercury electrode by bringing mercury into contact with a semiconductor single crystalline wafer; a forward bias voltage application step of applying a forward bias voltage to the mercury electrode; a C-V measuring step of applying a reverse bias voltage to the mercury electrode, and measuring a varying capacitance of the semiconductor single crystalline wafer; and a resistivity computing step of computing a resistivity on the basis of a relationship between the reverse bias voltage and the capacitance. In this way, a resistivity measuring method using a C-V technique is provided by which the resistivity of a semiconductor single crystalline wafer can be more reliably measured.

Inventors:

KUME FUMITAKA (JP)
FUNAKI MITSUYOSHI (JP)
KASHINO HISASHI (JP)

Application Number:

PCT/JP2017/041005

Publication Date:

June 14, 2018

Filing Date:

November 15, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

H01L21/66; G01R27/02

Foreign References:

JP2013046030A	2013-03-04
JPH07130809A	1995-05-19