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Title:
RF POWER AMPLIFIER INTEGRATED CIRCUIT COMPRISING A PACKAGED SEMICONDUCTOR CHIP, AND PRINTED CIRCUIT BOARD COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2023/031774
Kind Code:
A1
Abstract:
The invention relates to an RF power amplifier integrated circuit (1) comprising a semiconductor chip (2) encapsulated in a package (3), the chip (2) comprising at least one RF power transistor (4) and an input pre-adaptation circuit (5), the input pre-adaptation circuit (5) comprising an input shunt inductor and a stabilisation network (16), the input shunt inductor comprising an integrated input transmission line (15a, 15b) and at least one connection wire (14a, 14b), the stabilisation network (16) comprising at least one resistor (17) and at least one capacitor (18) connected in parallel between the integrated input transmission line (15a, 15b) and the gate (4a) of said at least one transistor (4).

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WO/2014/013339OVERCOMING MULTIPLE REFLECTIONS IN PACKAGES AND CONNECTORS AT HIGH SPEED BROADBAND SIGNAL ROUTING
WO/2004/032188PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK
JPS57111051SUPERHIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME
Inventors:
BOUISSE GÉRARD (FR)
DELAGE QUENTIN (FR)
GONZALEZ JULIEN (FR)
PLET SULLIVAN (FR)
Application Number:
PCT/IB2022/058095
Publication Date:
March 09, 2023
Filing Date:
August 30, 2022
Export Citation:
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Assignee:
WUPATEC (FR)
International Classes:
H01L23/66; H03F1/08; H03F1/56; H03F3/195; H05K1/02; H01L23/00; H01L23/495
Foreign References:
US20200366259A12020-11-19
US20210126593A12021-04-29
JPH10209769A1998-08-07
Attorney, Agent or Firm:
CABINET CHAILLOT (FR)
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