Title:
RINSE SOLUTION FOR REMOVING RESIST
Document Type and Number:
WIPO Patent Application WO/2010/037263
Kind Code:
A1
Abstract:
A rinse solution for removing resist includes quaternary ammonium hydroxide, water, alkyl diol aryl ether, dimethyl sulfoxide and corrosion inhibitor of polyacrylic acid series. The alkyl glycol of alkyl glycol aryl ether has 3-18 carbon atoms. The rinse solution for removing resist may clean the resist on a metal, metal alloy or dielectric substrate and other residues, and has low etch rate for metals such as Al and Cu, and nonmetals such as SiO2. And the rinse solution can be used in micro electronic field for the cleaning of semiconductor wafer.
Inventors:
PENG LIBBERT HONGXIU (CN)
Application Number:
PCT/CN2009/001082
Publication Date:
April 08, 2010
Filing Date:
September 25, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
PENG LIBBERT HONGXIU (CN)
PENG LIBBERT HONGXIU (CN)
International Classes:
G03F7/42; H01L21/02; C11D1/66; C23G1/06
Domestic Patent References:
| WO2002027409A1 | 2002-04-04 |
Foreign References:
| CN101187787A | 2008-05-28 | |||
| CN1982426A | 2007-06-20 | |||
| CN1900146A | 2007-01-24 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (No. 61 East Nanjing Road, Shanghai 2, CN)
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