Title:
SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2015/151413
Kind Code:
A1
Abstract:
When a SiC substrate (40), which has been subjected to machining, is subjected to heat treatment under a SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, in cases when latent scratches or the like are present in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment are performed, and thus high-quality SiC substrates can be produced.
Inventors:
TORIMI SATOSHI (JP)
YABUKI NORIHITO (JP)
NOGAMI SATORU (JP)
YABUKI NORIHITO (JP)
NOGAMI SATORU (JP)
Application Number:
PCT/JP2015/001303
Publication Date:
October 08, 2015
Filing Date:
March 10, 2015
Export Citation:
Assignee:
TOYO TANSO CO (JP)
International Classes:
C30B29/36; H01L21/302; C30B33/08; H01L21/205; H01L21/265
Foreign References:
| JP2008230944A | 2008-10-02 | |||
| JP2004002126A | 2004-01-08 | |||
| JP2009256145A | 2009-11-05 |
Other References:
See also references of EP 3128535A4
Attorney, Agent or Firm:
KATSURAGAWA, Naoki (JP)
Naoki Katsuragawa (JP)
Naoki Katsuragawa (JP)
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