Title:
METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/151412
Kind Code:
A1
Abstract:
Provided is a method in which growth speed does not decrease even when a cut SiC seed crystal is used in performing MSE. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy (MSE) is heated in a Si atmosphere and the surface of said SiC seed crystal is etched in order to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE, and therefore removing the work-affected layers can prevent a decrease in growth speed.
Inventors:
YABUKI NORIHITO (JP)
TORIMI SATOSHI (JP)
NOGAMI SATORU (JP)
TORIMI SATOSHI (JP)
NOGAMI SATORU (JP)
Application Number:
PCT/JP2015/001302
Publication Date:
October 08, 2015
Filing Date:
March 10, 2015
Export Citation:
Assignee:
TOYO TANSO CO (JP)
International Classes:
C30B33/12; C30B19/04; C30B29/36
Foreign References:
| JP2008016691A | 2008-01-24 | |||
| JP2009218575A | 2009-09-24 |
Other References:
See also references of EP 3128047A4
Attorney, Agent or Firm:
KATSURAGAWA, Naoki (JP)
Naoki Katsuragawa (JP)
Naoki Katsuragawa (JP)
Download PDF: