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Title:
SAMPLE OBSERVING METHOD AND SCANNING ELECTRON MICROSCOPE
Document Type and Number:
WIPO Patent Application WO/2010/095392
Kind Code:
A1
Abstract:
Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.

Inventors:
OMORI SEIKO (JP)
CHENG ZHACHUI (JP)
KAZUMI HIDEYUKI (JP)
Application Number:
PCT/JP2010/000778
Publication Date:
August 26, 2010
Filing Date:
February 09, 2010
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP (JP)
OMORI SEIKO (JP)
CHENG ZHACHUI (JP)
KAZUMI HIDEYUKI (JP)
International Classes:
H01J37/28; G01B15/04; H01J37/22; H01L21/66
Domestic Patent References:
WO2007094439A12007-08-23
Foreign References:
JP2005116795A2005-04-28
JP2007272593A2007-10-18
JP2005345272A2005-12-15
JPS63168946A1988-07-12
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
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