SCHOTTKY BARRIER DIODE

Title:

SCHOTTKY BARRIER DIODE

Document Type and Number:

WIPO Patent Application WO/2021/124649

Kind Code:

A1

Abstract:

[Problem] To prevent dielectric breakdown caused by misalignment between a trench and field insulating layer in a Schottky barrier diode using gallium oxide. [Solution] The present invention comprises an anode electrode 40 that is in Schottky contact with a drift layer 30, a cathode electrode 50 that is in ohmic contact with a semiconductor substrate 20, an insulating film 63 that coats an inner wall of a trench 61 formed in the drift layer 30, a metal film 64 that coats the inner wall of the trench 61 via the insulating film 63 and is electrically connected to the anode electrode 40, and a field insulating layer 70. The field insulating layer 70 includes a first part 71 that is located between a top surface 31 of the drift layer 30 and the anode electrode 40, and a second part 72 that coats the inner wall of the trench 61 via the metal film 64 and insulating film 63. Accordingly, dielectric breakdown does not occur even when the trench 61 and field insulating layer 70 are misaligned.

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Inventors:

FUJITA MINORU (JP)
ARIMA JUN (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)

Application Number:

PCT/JP2020/037722

Publication Date:

June 24, 2021

Filing Date:

October 05, 2020

Export Citation:

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Assignee:

TDK CORP (JP)

International Classes:

H01L29/06; H01L21/329; H01L29/47; H01L29/872

Domestic Patent References:

WO2019082580A1

2019-05-02

Foreign References:

JP2015507849A	2015-03-12
JP2015153769A	2015-08-24
US10439075B1	2019-10-08
JP2017199869A	2017-11-02
JP2019079984A	2019-05-23

Other References: