Title:
SECONDARY CELL STATE DIAGNOSIS METHOD, AND STATE DIAGNOSIS DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/188723
Kind Code:
A1
Abstract:
The present invention provides a secondary cell state diagnosis method and a state diagnosis device, whereby the degradation state of a secondary cell can be diagnosed with high precision on the basis of information that can be acquired by a simple operation. The secondary cell state diagnosis method includes a step (S7) for determining a calculation result indicating a relationship between a charging state and a closed-circuit voltage on the basis of a relationship between the charging state and an open-circuit voltage and a relationship between the charging state and an internal resistance, and a step (S8) for comparing a measurement result indicating the relationship between the charging state and the closed-circuit voltage and a calculation result indicating the relationship between the charging state and the closed-circuit voltage, the measurement result being acquired by successively performing measurement for each charging state of the secondary cell over the course of charging or over the course of discharging of the secondary cell. The secondary cell state diagnosis device comprises an acquisition unit for acquiring measurement data indicating the relationship between the charging state and the closed-circuit voltage, a storage unit, and a computation unit, the measurement data being input to the acquisition unit after being acquired by successively performing measurement for each charging state of the secondary cell over the course of charging or over the course of discharging of the secondary cell.
Inventors:
HONKURA KOHEI (JP)
INOUE TAKESHI (JP)
YONEMOTO MASAHIRO (JP)
HIRASAWA SHIGEKI (JP)
KONISHI HIROAKI (JP)
MOCHIZUKI MASAHITO (JP)
SUMIKAWA YOSUKE (JP)
HORIKOSHI NOBUYA (JP)
INOUE TAKESHI (JP)
YONEMOTO MASAHIRO (JP)
HIRASAWA SHIGEKI (JP)
KONISHI HIROAKI (JP)
MOCHIZUKI MASAHITO (JP)
SUMIKAWA YOSUKE (JP)
HORIKOSHI NOBUYA (JP)
Application Number:
PCT/JP2023/001776
Publication Date:
October 05, 2023
Filing Date:
January 20, 2023
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
G01R31/392; G01R31/382; G01R31/3828; G01R31/385; G01R31/387; G01R31/389; H01M10/42; H01M10/48
Domestic Patent References:
| WO2017199629A1 | 2017-11-23 | |||
| WO2010064392A1 | 2010-06-10 |
Foreign References:
| JP2020046317A | 2020-03-26 | |||
| JP2021163675A | 2021-10-11 | |||
| JP2014514704A | 2014-06-19 |
Attorney, Agent or Firm:
ISONO INTERNATIONAL PATENT OFFICE, P.C. (JP)
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