Title:
SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2023/030226
Kind Code:
A1
Abstract:
A self-aligned C-shaped vertical field effect transistor includes a semiconductor substrate (120) having an uppermost surface and a fin structure (1010) on the uppermost surface of the semiconductor substrate (120). The fin structure (1010) has two adjacent vertical segments with rounded ends that extend perpendicularly from the uppermost surface of the semiconductor substrate (120) and a horizontal segment that extends between and connects the two adjacent vertical segments. An opening is located between the two adjacent vertical segments on a side of the fin structure (1010) opposite to the horizontal segment.
Inventors:
XIE RUILONG (US)
ROBISON ROBERT (US)
JAGANNATHAN HEMANTH (US)
STRANE JAY WILLIAM (US)
ROBISON ROBERT (US)
JAGANNATHAN HEMANTH (US)
STRANE JAY WILLIAM (US)
Application Number:
PCT/CN2022/115436
Publication Date:
March 09, 2023
Filing Date:
August 29, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| US20210057568A1 | 2021-02-25 | |||
| US20160056295A1 | 2016-02-25 | |||
| US10170473B1 | 2019-01-01 | |||
| US20200403086A1 | 2020-12-24 | |||
| US20210183902A1 | 2021-06-17 | |||
| CN112103247A | 2020-12-18 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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