Title:
SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING
Document Type and Number:
WIPO Patent Application WO2003056603
Kind Code:
A3
Abstract:
A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.
Inventors:
DING PEIJUN
XU ZHENG
MOSELY RODERICK C
RENGARAJAN SURAJ
MAITY NIRMALYA
CARL DANIEL A
CHIN BARRY
SMITH PAUL F
ANGELO DARRYL
TOLIA ANISH
FU JIANMING
CHEN FUSEN
GOPALRAJA PRABURAM
TANG XIANMIN
FORSTER JOHN C
XU ZHENG
MOSELY RODERICK C
RENGARAJAN SURAJ
MAITY NIRMALYA
CARL DANIEL A
CHIN BARRY
SMITH PAUL F
ANGELO DARRYL
TOLIA ANISH
FU JIANMING
CHEN FUSEN
GOPALRAJA PRABURAM
TANG XIANMIN
FORSTER JOHN C
Application Number:
PCT/US2002/039510
Publication Date:
November 20, 2003
Filing Date:
December 10, 2002
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
C23C14/04; C23C14/34; C23C14/35; H01J37/32; H01J37/34; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01J37/34; H01J37/32
Foreign References:
| EP1119017A2 | 2001-07-25 |
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