Title:
SEMICONDUCTOR APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/099096
Kind Code:
A1
Abstract:
The present invention addresses the problem of a trench being formed deeper at a gate trench branching portion than at a linear gate trench portion. Provided is a semiconductor apparatus comprising: a first conductivity-type semiconductor substrate; a second conductivity-type base region disposed on an upper surface side of the semiconductor substrate; a first trench portion disposed penetrating through the base region from the upper surface of the semiconductor substrate; and a second conductivity-type contact region which is disposed in a part of the base region on the upper surface side of the semiconductor substrate, and which has a higher impurity concentration than the base region, wherein the first trench portion includes a branch portion on the upper surface of the semiconductor substrate, the branch portion being surrounded by the contact region on the upper surface of the semiconductor substrate.
Inventors:
NAITO TATSUYA (JP)
Application Number:
PCT/JP2016/086285
Publication Date:
June 15, 2017
Filing Date:
December 06, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L29/12; H01L29/78
Domestic Patent References:
| WO2015182233A1 | 2015-12-03 |
Foreign References:
| JP2013120809A | 2013-06-17 | |||
| JP2007221012A | 2007-08-30 | |||
| JP2012059841A | 2012-03-22 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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