Title:
SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/238805
Kind Code:
A1
Abstract:
Provided is a semiconductor device that has been made extremely fine. This semiconductor device has: a semiconductor layer on a substrate; a first conducting layer and a second conducting layer that are positioned in a separated manner on the semiconductor layer; a mask layer that is positioned in contact with an upper surface of the first conducting layer; a first insulating layer that is positioned covering the semiconductor layer, the first conducting layer, the second conducting layer, and the mask layer; and a third conducting layer that is positioned on the first insulating layer and overlaps with the semiconductor layer, wherein the first insulating layer is in contact with an upper surface and a side surface of the mask layer, a side surface of the first conducting layer, an upper surface and a side surface of the second conducting layer, and an upper surface of the semiconductor layer, and the semiconductor device has a region where the distance between facing end sections of the first conducting layer and the second conducting layer is 1 μm or less.
Inventors:
HOSAKA YASUHARU
NAKAZAWA YASUTAKA
SHIRAISHI TAKASHI
SATO RAI (JP)
OKAZAKI KENICHI (JP)
NAKAZAWA YASUTAKA
SHIRAISHI TAKASHI
SATO RAI (JP)
OKAZAKI KENICHI (JP)
Application Number:
PCT/IB2022/053937
Publication Date:
November 17, 2022
Filing Date:
April 28, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G09F9/30; H01L21/28; H01L27/32; H01L51/50; H05B33/12
Foreign References:
| JP2020170845A | 2020-10-15 | |||
| JP2017108158A | 2017-06-15 | |||
| JP2017011286A | 2017-01-12 | |||
| JP2016127117A | 2016-07-11 | |||
| JP2016058711A | 2016-04-21 | |||
| JP2018189937A | 2018-11-29 | |||
| JP2019153656A | 2019-09-12 |
Download PDF: