Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/145750
Kind Code:
A1
Abstract:
In order to prevent film peeling this method has the following steps: a substrate loading step, in which a first metal component containing film, which contains a first metal component, is formed on a substrate processing surface, and the first metal component containing film is not formed on the other surfaces; a first film formation step, in which a metal compound containing a second metal component that differs from the first metal component and a first reactive gas that reacts with the metal compound are alternately supplied multiple times to a processing chamber, and a second metal film is formed on the substrate placed in the processing chamber; a second film formation step, in which the metal compound and a second reactive gas that reacts with the metal compound are supplied to the processing chamber so as to mix with one another, and a third metal film in an amorphous state is formed upon the second metal film; a third film formation step, in which the metal compound and the first reactive gas are alternately supplied at least once and a fourth metal film is formed upon the third metal film; a step in which the second film formation step and the third film formation step are alternately performed multiple times; and a fourth film formation step, in which the metal compound and the second reactive gas are supplied to the processing chamber so as to mix with one another, and a fifth metal film in an amorphous state is formed upon the fourth metal film.
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| WO/2006/093262 | METHOD FOR FORMING TANTALUM NITRIDE FILM |
| WO/2009/145093 | SPUTTERING METHOD |
| JPH0987856 | DEPOSITED FILM FORMING DEVICE |
Inventors:
OGAWA ARITO (JP)
SEINO ATSURO (JP)
SEINO ATSURO (JP)
Application Number:
PCT/JP2014/059245
Publication Date:
October 01, 2015
Filing Date:
March 28, 2014
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/285; C23C16/08
Domestic Patent References:
| WO2007004443A1 | 2007-01-11 |
Foreign References:
| JP2003142425A | 2003-05-16 | |||
| JP2004273764A | 2004-09-30 | |||
| JP2002038271A | 2002-02-06 | |||
| JP2003193233A | 2003-07-09 | |||
| JPH11330005A | 1999-11-30 | |||
| JP2005158947A | 2005-06-16 |
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