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Title:
SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2016/120957
Kind Code:
A1
Abstract:
In a semiconductor-device manufacturing method according to the present invention, a cycle in which a step for supplying reducing gas to a substrate having an insulating surface and a conductive surface and a step for supplying metal-containing gas to the substrate are executed in a time-division manner is executed a predetermined number of times to selectively form a metal film on the insulating surface.

Inventors:
NAKATANI KIMIHIKO (JP)
Application Number:
PCT/JP2015/051965
Publication Date:
August 04, 2016
Filing Date:
January 26, 2015
Export Citation:
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Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
C23C16/04; H01L21/285; C23C16/08; H01L21/28; H01L21/31
Foreign References:
JP2005531918A2005-10-20
JP2013079447A2013-05-02
JP2008078647A2008-04-03
US20130243956A12013-09-19
JP2009024252A2009-02-05
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Masahiro Fukuoka (JP)
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