Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2018/163250
Kind Code:
A1
Abstract:
A film is formed on a substrate by performing (a) a step of supplying, from a first supply section, raw materials including a main element constituting the film to a substrate, and exhausting the raw materials via an exhaust section, and (b) a step of supplying, from a pair of second supply sections disposed adjacent to the first supply section so as to sandwich a straight line passing through the first supply section and the exhaust section, a reactant not containing the main element to the substrate, and exhausting the reactant via the exhaust section. The steps are performed under a condition such that the raw materials, when present independently, are not thermally decomposed, and simultaneously for at least a certain period.
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Inventors:
NAKATANI KIMIHIKO (JP)
SASAKI TAKAFUMI (JP)
KAMAKURA TSUKASA (JP)
HANASHIMA TAKEO (JP)
SASAKI TAKAFUMI (JP)
KAMAKURA TSUKASA (JP)
HANASHIMA TAKEO (JP)
Application Number:
PCT/JP2017/008796
Publication Date:
September 13, 2018
Filing Date:
March 06, 2017
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/205; C23C16/455; C23C16/52; H01L21/31
Foreign References:
| JP2016164932A | 2016-09-08 | |||
| JP2014056871A | 2014-03-27 | |||
| JP2013197507A | 2013-09-30 | |||
| JP2014099427A | 2014-05-29 | |||
| JP2009206489A | 2009-09-10 | |||
| JP2017063137A | 2017-03-30 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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