Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2022/196339
Kind Code:
A1
Abstract:
The present invention is capable of improving the step coverage performance of a film formed on a substrate having a groove. The method comprises: (a) a step of supplying a raw material gas to a substrate from the side of the substrate having a recess on the surface; (b) a step of supplying a reaction gas to the substrate; and a step of forming a film on the substrate by performing steps (a) and (b) a predetermined number of times as non-simultaneous cycles. In step (a), the raw material gas is made to collide with the inner wall of the recess to decompose the raw material gas and generate an intermediate, and in step (b), the intermediate adhered in the recess is reacted with the reaction gas.
More Like This:
Inventors:
OKAJIMA YUSAKU (JP)
HATTA HIROKI (JP)
IMAI YOSHINORI (JP)
HATTA HIROKI (JP)
IMAI YOSHINORI (JP)
Application Number:
PCT/JP2022/008551
Publication Date:
September 22, 2022
Filing Date:
March 01, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/34; H01L21/318
Foreign References:
| JP2021036602A | 2021-03-04 | |||
| JP2018186174A | 2018-11-22 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
Download PDF: