Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND CIRCUIT HAVING SAME SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/155551
Kind Code:
A1
Abstract:
In order to provide an element that switches an optical signal at a faster response speed to an electrical signal, and a manufacturing method for the same, a semiconductor device in which a first N-type semiconductor region (9), a P-type semiconductor region (10), and a second N-type semiconductor region (11) are arranged in the order mentioned, is configured to be provided with, in the P-type semiconductor region, a donor level of greater than or equal to 0.5 eV from the lower end of a conduction band, and less than or equal to half of the energy gap of the conduction band, wherein density of the donor level is higher than density of an acceptor level forming the P-type in the P-type semiconductor region.
Inventors:
TAKAHAMA TAKASHI (JP)
HISAMOTO DIGH (JP)
OKINO HIROYUKI (JP)
TEGA NAOKI (JP)
HISAMOTO DIGH (JP)
OKINO HIROYUKI (JP)
TEGA NAOKI (JP)
Application Number:
PCT/JP2013/058906
Publication Date:
October 02, 2014
Filing Date:
March 27, 2013
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L31/10
Foreign References:
| JPH01185978A | 1989-07-25 | |||
| JPH0677423A | 1994-03-18 |
Attorney, Agent or Firm:
INOUE, Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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