SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2022/077919

Kind Code:

A1

Abstract:

The present application provides a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate, a plurality of bit lines being disposed on the substrate and being arranged at intervals on the substrate in a first direction; a plurality of isolation gate structures, the isolation gate structures being located between adjacent bit lines, and the plurality of isolation gate structures being arranged at intervals on the substrate in a second direction; and a storage node contact structure, the storage node contact structure being located between adjacent isolation gate structures, and the bottom of the storage node contact structure extending into the substrate, wherein each isolation gate structure comprises a first isolation portion and a second isolation portion surrounding the periphery of the first isolation portion, and the top surface of the first isolation portion is not lower than the top surface of each bit line. The present application can reduce an inductive coupling effect between the storage node contact structures, improve the charge storage capacity of the semiconductor device, and optimize the storage stability and reliability of the semiconductor device.

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Inventors:

ZHU XIAO (CN)

Application Number:

PCT/CN2021/096858

Publication Date:

April 21, 2022

Filing Date:

May 28, 2021

Export Citation:

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Assignee:

CHANGXIN MEMORY TECH INC (CN)

International Classes:

H01L21/8242; H01L27/108

Foreign References:

CN1790722A	2006-06-21
US20020187606A1	2002-12-12
CN1238556A	1999-12-15
CN1815718A	2006-08-09

Other References: