Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/183959
Kind Code:
A1
Abstract:
Provided in the present application are a semiconductor device and a manufacturing method therefor, and an electronic device. The semiconductor device comprises a drift region, a first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are located on the same side of the drift region. The first electrode structure comprises a first insulating layer and a first electrode, wherein the first insulating layer is located at the periphery of the first electrode. The second electrode structure comprises a second insulating layer and a second electrode, wherein the second insulating layer is located at the periphery of the second electrode. A buffer structure is arranged between the first electrode and the second electrode, and the buffer structure is used for increasing the accumulation of carriers in the drift region during conduction. In the present application, a buffer structure is arranged between a first electrode and a second electrode, such that the flow of carriers stored in a drift region is buffered when a semiconductor device is conducted, thereby increasing the concentration of carriers in the drift region and facilitating the reduction in a conduction voltage drop of the semiconductor device.

Inventors:
YANG WENTAO (CN)
WANG KANG (CN)
SONG CHAOFAN (CN)
WANG LIANGHAO (CN)
ZHAO QIAN (CN)
DAI LOUCHENG (CN)
HOU ZHAOZHENG (CN)
HUANG BONING (CN)
Application Number:
PCT/CN2022/077597
Publication Date:
September 09, 2022
Filing Date:
February 24, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/739; H01L21/331; H01L29/06; H01L29/417; H01L29/423
Foreign References:
CN113178474A2021-07-27
CN108389901A2018-08-10
CN107768436A2018-03-06
CN109148572A2019-01-04
US20150144988A12015-05-28
CN111261713A2020-06-09
CN202110228786A2021-03-02
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
Download PDF: