Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/148535
Kind Code:
A1
Abstract:
A semiconductor device is provided with a substrate; an insulating film, which
is formed on the substrate and is composed of a fluorine added carbon film; a copper
wiring embedded in the insulating film; and a barrier film formed between the
insulating film and the copper wiring. The barrier film is provided with a first
film composed of titanium, for suppressing diffusion of the fluorine; and a second
film composed of tantalum between the first film and the copper wiring, for suppressing
diffusion of the copper.
Inventors:
HORIGOME MASAHIRO (JP)
Application Number:
PCT/JP2007/061450
Publication Date:
December 27, 2007
Filing Date:
June 06, 2007
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
HORIGOME MASAHIRO (JP)
HORIGOME MASAHIRO (JP)
International Classes:
H01L21/3205; H01L21/768; H01L23/52; H01L23/522
Foreign References:
| JP2006135363A | 2006-05-25 | |||
| JP2005223360A | 2005-08-18 | |||
| JP2005026386A | 2005-01-27 | |||
| JP2005109138A | 2005-04-21 | |||
| JP2005302811A | 2005-10-27 |
Other References:
See also references of EP 2034517A4
Attorney, Agent or Firm:
YOSHITAKE, Kenji et al. (Room 323 Fuji Bldg.,2-3, Marunouchi 3-chom, Chiyoda-ku Tokyo, JP)
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