Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/017007
Kind Code:
A1
Abstract:
An n-type layer (3) is formed on a rear surface of a Si substrate (1) by implanting an n-type impurity. A recessed section (4) is formed in the rear surface of the Si substrate (1). After forming the n-type layer (3), an oxide film (5) is formed on the rear surface and in the recessed section (4). The oxide film (5) on the rear surface is removed, while leaving the protection film in the recessed section (4). After removing the oxide film (5), an Al-Si film (6) is formed on the rear surface. A metal electrode (7) is formed on the Al-Si film (6). Next, effects of an embodiment of the present invention are explained in comparison with a comparison example. The oxide film (5) in the recessed section (4) prevents Al from diffusing into the Si substrate (1) from the Al-Si film (6) via the recessed section (4).
Inventors:
HISANO MISATO (JP)
Application Number:
PCT/JP2014/070246
Publication Date:
February 04, 2016
Filing Date:
July 31, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/28
Foreign References:
| JPH0590193A | 1993-04-09 | |||
| JPH04132218A | 1992-05-06 | |||
| JP2004303755A | 2004-10-28 | |||
| JP2004179474A | 2004-06-24 | |||
| JPH0521387A | 1993-01-29 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Takada 守 (JP)
Takada 守 (JP)
Download PDF:
Previous Patent: CAPSULE FORMULATION
Next Patent: SHEET-LIKE-BATTERY TEST DEVICE AND SHEET-LIKE-BATTERY TEST METHOD
Next Patent: SHEET-LIKE-BATTERY TEST DEVICE AND SHEET-LIKE-BATTERY TEST METHOD