Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/017137
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor device and a semiconductor device manufacturing method. The semiconductor device comprises: a semiconductor substrate; a bottom electrode metal layer and a top electrode metal layer which are located on the semiconductor substrate; a resistive switching layer located between the bottom electrode metal layer and the top electrode metal layer, the transverse width of the resistive switching layer being greater than that of the bottom electrode metal layer and/or the top electrode metal layer, and the resistive switching layer having a variable resistor; an oxygen barrier layer located between the bottom electrode metal layer and the top electrode metal layer, the oxygen barrier layer being located above the resistive switching layer; and an oxygen capturing layer located between the bottom electrode metal layer and the top electrode metal layer, the transverse width of the oxygen capturing layer being less than that of the resistive switching layer, and the oxygen capturing layer being located above the oxygen barrier layer.
Inventors:
CHIU TAIWEI (CN)
SHEN TINGYING (CN)
QIAN HE (CN)
SHEN TINGYING (CN)
QIAN HE (CN)
Application Number:
PCT/CN2021/103130
Publication Date:
January 27, 2022
Filing Date:
June 29, 2021
Export Citation:
Assignee:
XIAMEN INDUSTRIAL TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| CN112002801A | 2020-11-27 | |||
| US20140061570A1 | 2014-03-06 | |||
| CN102610746A | 2012-07-25 | |||
| CN106159086A | 2016-11-23 | |||
| CN1574288A | 2005-02-02 | |||
| CN106374040A | 2017-02-01 | |||
| CN102301425A | 2011-12-28 | |||
| CN101345289A | 2009-01-14 | |||
| CN101552321A | 2009-10-07 |
Attorney, Agent or Firm:
BEIJING LEPATENT INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
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