Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/145805
Kind Code:
A1
Abstract:
Provided is a semiconductor device in which doping concentration peaks in a buffer region each have an apex at which the doping concentration shows a maximum, a lower tail in which the doping concentration monotonously decreases from the apex toward a lower surface, and an upper tail in which the doping concentration monotonously decreases from the apex toward an upper surface. At least one of the doping concentration peaks in the buffer region is a gradual concentration peak of which a slope ratio calculated by dividing the absolute value of the slope of the upper tail by the absolute value of the slope of the lower tail is 0.1 to 3 inclusive.
Inventors:
YAGUCHI SHUNTARO (JP)
TAKISHITA HIROSHI (JP)
MOMOTA SEIJI (JP)
TAKISHITA HIROSHI (JP)
MOMOTA SEIJI (JP)
Application Number:
PCT/JP2023/002394
Publication Date:
August 03, 2023
Filing Date:
January 26, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/265; H01L29/06; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2017047285A1 | 2017-03-23 | |||
| WO2021201216A1 | 2021-10-07 | |||
| WO2021075330A1 | 2021-04-22 | |||
| WO2016203545A1 | 2016-12-22 |
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
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