Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/042597
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide semiconductor device manufacturing method and a semiconductor manufacturing device that, without requiring a complex gas supply system, can ensure processing efficiency and suppress contamination by foreign bodies. A representative example of this semiconductor device manufacturing method comprises: a step in which the quantity of fabrication residue of a film subjected to processing that has been formed on a semiconductor wafer is compared with a threshold value; a step in which the semiconductor wafer is heated while an organic gas that includes a substance having, in a molecule thereof, at least two substituents having a lone electron pair is supplied, to form a compound of the film subjected to processing and the organic gas; and a step in which, on the basis of the result of the comparison, after the step in which the compound is formed, the wafer is further heated, raising the temperature thereof to a prescribed temperature, to detach the compound from the surface of the semiconductor wafer.
Inventors:
YAMAGUCHI YOSHIHIDE (JP)
Application Number:
PCT/JP2022/031666
Publication Date:
February 29, 2024
Filing Date:
August 23, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2022123725A1 | 2022-06-16 | |||
| WO2021192210A1 | 2021-09-30 |
Attorney, Agent or Firm:
DAI-ICHI INTERNATIONAL PATENT OFFICE, P.C. (JP)
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