SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREFOR

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREFOR

Document Type and Number:

WIPO Patent Application WO/2019/054459

Kind Code:

A1

Abstract:

Second conductivity-type guard rings (21) are formed in such a manner as to be located at positions away from the surface of a first conductivity-type layer (2, 60) that comprises a first conductivity-type semiconductor formed on a substrate (1). By this configuration, the boundary portion of a p-n junction formed between the guard rings (21) and the first-conductivity-type layer (2, 60) is in a state of being spaced away from an interlayer insulation film (10). In this state, the interlayer insulation film (10) is not in contact with the p-n junction, and hence even when electric-field concentration takes place at the p-n junction, the electric field intensity that is applied to the interlayer insulation film (10) can be minimized.

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Inventors:

NOBORIO MASATO (JP)
ISHIKO MASAYASU (JP)
SAITO JUN (JP)

Application Number:

PCT/JP2018/034065

Publication Date:

March 21, 2019

Filing Date:

September 13, 2018

Export Citation:

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Assignee:

DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)

International Classes:

H01L29/06; H01L21/336; H01L29/12; H01L29/78

Foreign References:

JP2014170778A	2014-09-18
JP2015076592A	2015-04-20
JP2008004643A	2008-01-10
EP3012870A1	2016-04-27
JP2015153787A	2015-08-24
JP2016066780A	2016-04-28

Attorney, Agent or Firm:

YOU-I PATENT FIRM (JP)

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