SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2014/115790

A1

Provided is a highly reliable semiconductor device and a method for manufacturing same. The method for manufacturing the semiconductor device includes: a step for forming an interlayer insulating film on a semiconductor substrate; a step for forming a conductive plug in the interlayer insulating film, the conductive plug having a top surface for forming the same plane as the top surface of the interlayer insulating film; a step for forming a first titanium film on the interlayer insulating film and the conductive plug; a step for forming an aluminum diffusion-preventing film on the first titanium film; a step for forming a second titanium film on the aluminum diffusion-preventing film; a step for forming an aluminum film on the second titanium film; and a step for shaping the area from the aluminum film to the first titanium film by etching to form wiring.

JP5036172	Substrate processing equipment, substrate processing method and semiconductor device manufacturing method
WO/2008/010370	SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM
JPH0423361	OHMIC ELECTRODE STRUCTURE OF SEMICONDUCTOR DEVICE

KANSAKU TAKASHI (JP)

PCT/JP2014/051329

July 31, 2014

January 23, 2014

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PS4 LUXCO SARL (LU)
KANSAKU TAKASHI (JP)

H01L21/28; H01L21/3205; H01L21/3065; H01L21/3213; H01L21/768; H01L23/532

JP2004207676A	2004-07-22
JP2003332338A	2003-11-21
JP2011233833A	2011-11-17
JP2000306999A	2000-11-02
JPH0855837A	1996-02-27
JP2003092271A	2003-03-28
JPS639954A	1988-01-16

KATO, Asamichi (JP)
Asamichi Kato (JP)

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