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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/052991
Kind Code:
A1
Abstract:
A semiconductor device (100) is provided with: a substrate (11); a first thin film transistor (10A), which is supported by the substrate (11), and which has a first active region (13c) that mainly contains crystalline silicon; and a second thin film transistor (10B), which is supported by the substrate (11), and which has a second active region (17c) that mainly contains an oxide semiconductor having a crystalline portion.

Inventors:
MAKITA NAOKI
TONE SATORU
Application Number:
PCT/JP2014/071475
Publication Date:
April 16, 2015
Filing Date:
August 15, 2014
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
H01L21/336; G09F9/30; H01L21/20; H01L29/786
Domestic Patent References:
WO2012176422A12012-12-27
WO2011104938A12011-09-01
Foreign References:
JP2010003910A2010-01-07
JP2011119672A2011-06-16
JP2013191852A2013-09-26
JP2011054936A2011-03-17
JPH05299653A1993-11-12
JP2009506563A2009-02-12
JP2011023695A2011-02-03
JP2009033145A2009-02-12
JP2011048339A2011-03-10
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
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