Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/147264
Kind Code:
A1
Abstract:
A p type base layer (2) is formed on the front surface of an n type silicon substrate (1). First and second n+ type buffer layers (8, 9) are formed on the rear surface of the n type silicon substrate (1). The first n+ type buffer layer (8) is formed by means of proton injections of a plurality of times at different acceleration voltages, and has a plurality of peak concentrations at different depths from the rear surface of the n type silicon substrate (1). The second n+ type buffer layer (9) is formed by means of phosphorus injection. The peak concentration positions of phosphorus are shallower than the peak concentration positions of proton from the rear surface of the n type silicon substrate (1). The phosphorus peak concentrations are higher than the proton peak concentrations. At the peak concentration position of proton, the proton concentrations are higher than the phosphorus concentrations.
More Like This:
Inventors:
SUZUKI KENJI (JP)
NARAZAKI ATSUSHI (JP)
KAMIBABA RYU (JP)
FUKADA YUSUKE (JP)
NAKAMURA KATSUMI (JP)
NARAZAKI ATSUSHI (JP)
KAMIBABA RYU (JP)
FUKADA YUSUKE (JP)
NAKAMURA KATSUMI (JP)
Application Number:
PCT/JP2015/057539
Publication Date:
September 22, 2016
Filing Date:
March 13, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; H01L29/739; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2013147274A1 | 2013-10-03 |
Foreign References:
| JP2013138172A | 2013-07-11 | |||
| JP4128777B2 | 2008-07-30 | |||
| JP2002507058A | 2002-03-05 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Takada 守 (JP)
Takada 守 (JP)
Download PDF: