Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR INSPECTING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/189660
Kind Code:
A1
Abstract:
Even after a wafer has been diced into chips, it is possible in the present invention to ascertain the positional information of each of the chips in the wafer state. In order to solve the above problem, a semiconductor device according to the present invention has: an n-type drift layer formed on the main surface of an n-type SiC substrate; an active region formed on the upper surface of the drift layer; a p-type field relaxation region formed on the upper surface of the drift layer so as to surround the active region in plan view; and a first protection film comprising a first plastic material, the first protection film being formed above the field relaxation region. An identification mark is formed on the upper surface of a part of the active region, the identification mark comprising a first plastic material and being provided with the positional information of the chips in the wafer state.
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Inventors:
MATSUSHIMA HIROYUKI (JP)
OKINO HIROYUKI (JP)
YAMADA RENICHI (JP)
OKINO HIROYUKI (JP)
YAMADA RENICHI (JP)
Application Number:
PCT/JP2015/065121
Publication Date:
December 01, 2016
Filing Date:
May 26, 2015
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L21/02; H01L21/66
Domestic Patent References:
| WO2014104100A1 | 2014-07-03 |
Foreign References:
| JP2011258617A | 2011-12-22 | |||
| JP2013229440A | 2013-11-07 | |||
| JPH07235617A | 1995-09-05 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Patent business corporation Tsutsui international patent firm (JP)
Patent business corporation Tsutsui international patent firm (JP)
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