Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/166907
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent electrical properties. Also provided is a semiconductor device having stable electrical properties. This semiconductor device is manufactured by a method comprising the following steps: a first step in which a metal oxide-containing semiconductor film is formed on an insulating layer; a second step in which a conductive film is formed on the semiconductor film; a third step in which a first resist mask is formed on the conductive film, and the conductive film is etched to form a first conductive layer and expose the upper surface of the semiconductor film which is not covered with the first conductive layer; a fourth step in which a second resist mask that covers the upper surface and the side surface of the first conductive layer and covers a portion of the upper surface of the semiconductor film is formed, and the semiconductor film is etched to form a semiconductor layer and expose the upper surface of the insulating layer which is not covered with the semiconductor layer.
Inventors:
NAKAZAWA YASUTAKA
OKAZAKI KENICHI (JP)
OHIDE TAKAYUKI
SATO RAI (JP)
OKAZAKI KENICHI (JP)
OHIDE TAKAYUKI
SATO RAI (JP)
Application Number:
PCT/IB2019/051279
Publication Date:
September 06, 2019
Filing Date:
February 18, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; G09F9/00; G09F9/30; H01L29/786; H01L51/50
Foreign References:
| JP2015072448A | 2015-04-16 | |||
| JP2017204641A | 2017-11-16 | |||
| JP2012160719A | 2012-08-23 | |||
| JP2010080952A | 2010-04-08 | |||
| JP2012099796A | 2012-05-24 | |||
| JP2013033927A | 2013-02-14 |
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