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Title:
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/182360
Kind Code:
A1
Abstract:
An etching-resistant material (20) is disposed on one surface (11) of a substrate (10), and the etching-resistant material is dry-etched and patterned using a photoresist (40). When patterning the photoresist (40), the sidewalls of the photoresist are given a tapered shape using a gray-tone mask (50) having a gray-tone portion (53). Then, by dry etching the etching-resistant material using the photoresist having the sidewall made into a tapered shape, the etching-resistant material becomes a tapered shape in which the sidewalls (21a–23a) are inclined relative to one surface. The taper angle θ1 can be made to be 0.2-60 degrees inclusive, with no fence remaining.

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Inventors:
KAKUTA KAZUYUKI (JP)
KOJIMA SATOSHI (JP)
KANOSUE MASAKAZU (JP)
FURUICHI TAKAMOTO (JP)
NISHIDA JUNYA (JP)
Application Number:
PCT/JP2023/011247
Publication Date:
September 28, 2023
Filing Date:
March 22, 2023
Export Citation:
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Assignee:
DENSO CORP (JP)
International Classes:
H01L21/3065; H01L21/3205; H01L21/3213; H01L21/768; H01L21/822; H01L23/522; H01L27/04
Domestic Patent References:
WO2008059915A12008-05-22
Foreign References:
JP2000003911A2000-01-07
US20150221524A12015-08-06
JP2009158940A2009-07-16
US20100255409A12010-10-07
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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