Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/059177
Kind Code:
A1
Abstract:
Provided is a highly reliable semiconductor device. This semiconductor device comprises: a semiconductor substrate (10) having a first region (NP1) and a second region (NP2); a first insulator layer (2b); a first gate electrode (3b) having a first semiconductor layer (31b) that contains an impurity, a first conductor layer (32b) that contains titanium, a second conductor layer (33b) that contains nitrogen and either titanium or tungsten, and a third conductor layer (34b) that contains tungsten; a second insulator layer (4b) that is provided on the third conductor layer and that contains oxygen and silicon; a third insulator layer (5b) that is provided on the second insulator layer and that contains nitrogen and silicon; a first contact (CS) provided on the first region; a second contact (CS) provided on the second region; and a third contact (C0) that is provided on the third conductor layer of the first gate electrode and that penetrates through the second insulator layer and the third insulator layer.
Inventors:
INDEN TOMOYA (JP)
Application Number:
PCT/JP2020/035504
Publication Date:
March 24, 2022
Filing Date:
September 18, 2020
Export Citation:
Assignee:
KIOXIA CORP (JP)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| JP2004363430A | 2004-12-24 | |||
| JP2008166797A | 2008-07-17 | |||
| JP2013042019A | 2013-02-28 | |||
| JP2006049779A | 2006-02-16 | |||
| US20040266151A1 | 2004-12-30 | |||
| JP2004303799A | 2004-10-28 | |||
| JP2019149531A | 2019-09-05 | |||
| JPH10189974A | 1998-07-21 |
Attorney, Agent or Firm:
SAKURA PATENT OFFICE, P.C. (JP)
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