Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/059176
Kind Code:
A1
Abstract:
This semiconductor device is provided with a memory element writing unit (10) having: a memory element (1) which can be electrically written one time only and stores a binary value; a writing control section (2) which is connected to the memory element (1) via a first node signal (N1) and performs writing into the memory element (1) on the basis of a write control signal (CT1) instructing writing into the memory element (1); and a write-state detection circuit (5) which is capable of detecting the state that the memory element (1) is already written from a measurement signal obtained by measuring the first node signal (N1). If a detection signal indicating the already-written state of the memory element (1) is received from the write-state detection circuit (5) after the writing into the memory element (1) is started, the writing control section (2) stops the writing operation when a given period of time has elapsed after the detection of the already-written state of the memory element (1).
Inventors:
HIRANO HIROSHIGE (JP)
KURIYAMA HIROAKI (JP)
SAKAGAMI MASAHIKO (JP)
GUTMAN MICHA (IL)
SARIG EREZ (IL)
ROIZIN YAKOV (IL)
KURIYAMA HIROAKI (JP)
SAKAGAMI MASAHIKO (JP)
GUTMAN MICHA (IL)
SARIG EREZ (IL)
ROIZIN YAKOV (IL)
Application Number:
PCT/JP2020/035503
Publication Date:
March 24, 2022
Filing Date:
September 18, 2020
Export Citation:
Assignee:
TOWER PARTNERS SEMICONDUCTOR CO LTD (JP)
TOWER SEMICONDUCTOR LTD (IL)
TOWER SEMICONDUCTOR LTD (IL)
International Classes:
G11C17/16; G11C17/18
Foreign References:
| US20130286710A1 | 2013-10-31 | |||
| US20110273949A1 | 2011-11-10 | |||
| JPH05206810A | 1993-08-13 | |||
| US20080251887A1 | 2008-10-16 | |||
| JP2012109329A | 2012-06-07 | |||
| JP2008250207A | 2008-10-16 | |||
| US5668751A | 1997-09-16 | |||
| JP2020155193A | 2020-09-24 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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