Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/212773
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device that can satisfactorily ensure a breakdown voltage not only in a cell region but also in a termination region in a super-junction structure. The semiconductor device (1) of the present invention comprises a cell region (CL) and a termination region (ET) and further comprises: drift regions (3) of a first conductivity type and pillar regions (4) of a second conductivity type, which extend in the thickness direction on a SiC substrate (2) and which are alternately formed from the cell region (CL) to the termination region (ET) in the direction perpendicular to the thickness direction; a RESURF layer (10) formed astride a plurality of pillar regions (4) in the termination region (ET) and formed, in the thickness direction, from the surfaces of the drift regions (3) and the pillar regions (4); and a second conductivity-type high concentration region (11) formed in the surface of the RESURF layer (10) and having a higher impurity concentration than the RESURF layer (10). The pillar regions (4) are not formed below the high concentration region (11) in the thickness direction.
Inventors:
HAMADA KENJI (JP)
EBIHARA KOHEI (JP)
EBIHARA KOHEI (JP)
Application Number:
PCT/JP2017/014675
Publication Date:
December 14, 2017
Filing Date:
April 10, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Foreign References:
| JP2006278826A | 2006-10-12 | |||
| JP2008153620A | 2008-07-03 | |||
| JP2014003233A | 2014-01-09 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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