Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/042886
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising: a drift region of a first conductivity type provided in a semiconductor substrate; a buffer region of a first conductivity type provided closer to a back surface of the semiconductor substrate than the drift region and having a first peak of doping concentration; and a first lattice defect region provided closer to an upper surface of the semiconductor substrate than the first peak in the depth direction of the semiconductor substrate, and having a recombination center. The buffer region is provided closer to the upper surface of the semiconductor substrate than the first lattice defect region, and has a hydrogen peak where the hydrogen chemical concentration distribution is at a peak. In the depth direction of the semiconductor substrate, an integrated concentration obtained by integrating doping concentrations from the upper end of the drift region to the hydrogen peak is greater than or equal to a critical integrated concentration.
Inventors:
KUBOUCHI MOTOYOSHI (JP)
YOSHIMURA TAKASHI (JP)
SAWA YUKI (JP)
YAMAGUCHI SYOUGO (JP)
YOSHIMURA TAKASHI (JP)
SAWA YUKI (JP)
YAMAGUCHI SYOUGO (JP)
Application Number:
PCT/JP2022/034599
Publication Date:
March 23, 2023
Filing Date:
September 15, 2022
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/265; H01L21/322; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| WO2021075330A1 | 2021-04-22 | |||
| WO2021125140A1 | 2021-06-24 | |||
| WO2021029285A1 | 2021-02-18 | |||
| WO2016204126A1 | 2016-12-22 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Download PDF: