Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/199160
Kind Code:
A1
Abstract:
Provided is a semiconductor device (10) with a high degree of integration. This semiconductor device has a first and a second transistor that are electrically connected to each other, and a first insulation layer (110), wherein: the first transistor (M2) has a first semiconductor layer (108), a second insulation layer (106), and first through third conductive layers; the second transistor (M1) has a second semiconductor layer (109), a third insulation layer (106), and fourth through sixth conductive layers; the first insulation layer is positioned on the first conductive layer (112a), and has an opening that reaches the first conductive layer; the second conductive layer (112b) is positioned on the first insulation layer; the first semiconductor layer reaches the upper surface of the first conductive layer, the inner wall of the opening, and the second conductive layer; the third conductive layer (104) is positioned so as to overlap the inner wall of the opening on the second insulation layer; the third insulation layer is positioned on the fourth conductive layer (112b); the second semiconductor layer is positioned on the third insulation layer so as to overlap the fourth conductive layer; and in a cross-sectional view the fifth conductive layer (116a) reaches the upper surface of the second semiconductor layer on one side, while the sixth conductive layer (116b) reaches the upper surface on the other side opposing the one side.
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Inventors:
HOSAKA YASUHARU
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
JINTYOU MASAMI
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
JINTYOU MASAMI
Application Number:
PCT/IB2023/053329
Publication Date:
October 19, 2023
Filing Date:
April 03, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/088; H01L21/8234; H01L29/786; H05B33/02; H05B33/10; H10K50/10; H10K59/00
Foreign References:
| JP2019220516A | 2019-12-26 | |||
| JP2018078344A | 2018-05-17 | |||
| JP2013211537A | 2013-10-10 | |||
| US20200161312A1 | 2020-05-21 | |||
| US20160268382A1 | 2016-09-15 | |||
| JP2022153051A | 2022-10-12 |
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