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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/199159
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device having a small occupancy area. A semiconductor device having: a first electroconductive layer; a second electroconductive layer positioned on the first electroconductive layer; a first insulation layer in contact with the upper surface of the first electroconductive layer and with the upper and side surfaces of the second electroconductive layer; a third electroconductive layer positioned on the first insulation layer; a semiconductor layer in contact with the third electroconductive layer, the upper surface of the first electroconductive layer, and the side surfaces of the first insulation layer; a second insulation layer positioned on the first insulation layer, the semiconductor layer, and the third electroconductive layer; and a fourth electroconductive layer positioned on the second insulating layer, the fourth electroconductive layer overlapping the semiconductor layer with the second insulating layer interposed therebetween. The smallest distance from the upper surface of the first electroconductive layer to the upper surface of the second electroconductive layer is greater than the smallest distance from the upper surface of the first electroconductive layer to the lower surface of the fourth electroconductive layer.

Inventors:
SHIMA YUKINORI
IGUCHI TAKAHIRO
OHNO MASAKATSU
DOBASHI MASAYOSHI
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/053317
Publication Date:
October 19, 2023
Filing Date:
April 03, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/41; H01L29/417; H05B33/14; H05B44/00; H10K50/10
Foreign References:
JP2016149552A2016-08-18
JP2016111040A2016-06-20
JP2017168760A2017-09-21
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