Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/108911
Kind Code:
A1
Abstract:
In the present invention, after proton injection (16), an n-type field stop layer (3) is formed by forming a hydrogen-induced donor by means of furnace annealing processing, and furthermore the disorder generated in a proton transmitting region (14) is reduced by means of laser annealing processing, forming an n-type reduced-disorder region (18). In such a manner, it is possible to provide: a stable, low-cost semiconductor device that can have improved electrical characteristics such as low conduction resistance and no leakage current by forming an n-type reduced-disorder region (18) and an n-type field stop layer (3) resulting from proton injection (16); and a method for producing the semiconductor device.
Inventors:
MIYAZAKI MASAYUKI (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
KURIBAYASHI HIDENAO (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
KURIBAYASHI HIDENAO (JP)
Application Number:
PCT/JP2013/051010
Publication Date:
July 25, 2013
Filing Date:
January 18, 2013
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/336; H01L29/78
Domestic Patent References:
| WO2000016408A1 | 2000-03-23 |
Foreign References:
| JP2001077357A | 2001-03-23 | |||
| JP2007059550A | 2007-03-08 | |||
| JPH0427706B2 | 1992-05-12 | |||
| US20050116249A1 | 2005-06-02 | |||
| US20060286753A1 | 2006-12-21 | |||
| JP2001160559A | 2001-06-12 | |||
| JP2009099705A | 2009-05-07 | |||
| JP2007055352A | 2007-03-08 | |||
| JP2009176892A | 2009-08-06 |
Other References:
See also references of EP 2806461A4
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Akinori Sakai (JP)
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