Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/199570
Kind Code:
A1
Abstract:
A semiconductor device 10 according to the present invention comprises a plurality of p-type deep layers 36, a plurality of n-type deep layers 37, an n-type drift layer 38, and an n-type high-concentration layer 39. The n-type high-concentration layer is in contact with at least a part of the lower surface of a p-type deep layer corresponding thereto among the plurality of p-type deep layers, and has a higher n-type impurity concentration than the drift layer.
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Inventors:
TAKAYA HIDEFUMI (JP)
Application Number:
PCT/JP2023/002514
Publication Date:
October 19, 2023
Filing Date:
January 26, 2023
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Foreign References:
| JP2010225615A | 2010-10-07 | |||
| JP2013038308A | 2013-02-21 | |||
| JP2017152489A | 2017-08-31 | |||
| JP2016225455A | 2016-12-28 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
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