Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/149131
Kind Code:
A1
Abstract:
According to the present invention, a p-type impurity concentration profile (41) in the depth direction of a p-type base region is controlled by means of ion implantation into the p-type base region in two or more stages. The ion implantation into the p-type base region in two or more stages are performed at different accelerating voltages, while setting the dose amount such that the higher the accelerating voltage is, the lower the dose amount is. With respect to the p-type impurity concentration profile (41) in the depth direction of the p-type base region, the impurity concentration asymmetrically decreases from a depth position (D1), at which the impurity concentration is highest, toward the n+ type source region side and toward the n+ type drain region side. With respect to the p-type impurity concentration profile (41), the impurity concentration decreases in stages at one or more different depth positions on the n+ type drain region side from the depth position (D1). Consequently, the present invention is able to ameliorate the trade-off relationship between increase of a gate threshold voltage and decrease of an on-resistance.
Inventors:
MORIYA TOMOHIRO (JP)
KINOSHITA AKIMASA (JP)
KINOSHITA AKIMASA (JP)
Application Number:
PCT/JP2022/047790
Publication Date:
August 10, 2023
Filing Date:
December 23, 2022
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Foreign References:
| JP2017139441A | 2017-08-10 | |||
| JP2020205295A | 2020-12-24 | |||
| JP2020119945A | 2020-08-06 | |||
| US20200098868A1 | 2020-03-26 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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