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Title:
SEMICONDUCTOR DEVICE, AND POTENTIAL MEASUREMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/101075
Kind Code:
A1
Abstract:
The present invention relates to: a semiconductor device which enables electrostatic discharge damage to be inhibited in an electrode formation process when providing electrodes and an amplification unit to the same substrate; and a potential measurement device. A cathode is connected to a first part of an amplification transistor for amplifying a signal read by a read electrode which is in contact with a liquid that introduces a sample, and which reads the potential, and a diode for grounding an anode is provided. As a result of this configuration, a negative charge generated between electrodes and the amplification transistor in an electrode formation process is bypassed from the diode and discharged in the ground direction, and thus electrostatic discharge damage is inhibited. The present invention is applicable to bioelectric potential measurement devices.

Inventors:
SATO Masahiro (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
KAMETANI Machiko (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
OGI Jun (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
KATO Yuri (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
Application Number:
JP2017/041416
Publication Date:
June 07, 2018
Filing Date:
November 17, 2017
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1, Asahi-cho Atsugi-sh, Kanagawa 14, 〒2430014, JP)
International Classes:
G01N27/416; H03F1/52
Foreign References:
JP2013092437A2013-05-16
JP2013011482A2013-01-17
JP2012508051A2012-04-05
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (Nishishinjukukimuraya Building 9F, 5-25 Nishi-Shinjuku 7-chome, Shinjuku-k, Tokyo 23, 〒1600023, JP)
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