Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/153027
Kind Code:
A1
Abstract:
Provided is a highly reliable semiconductor device that has low conduction loss and switching loss, and that can achieve an increase in turn-off cut-off resistance. The semiconductor device comprises a switching gate and a carrier control gate that are driven independently of each other, and is characterized by comprising, as viewed in plan, a central region cell, a peripheral region cell surrounding the circumference of the central region cell, and a terminal region surrounding the circumference of the peripheral region cell, wherein the central region cell includes a switching element having the switching gate and the carrier control gate, and the peripheral region cell is disposed between the central region cell and the terminal region, the switching element of the peripheral region cell having a gate only composed of the carrier control gate.
Inventors:
MIYOSHI TOMOYUKI (JP)
FURUKAWA TOMOYASU (JP)
FURUKAWA TOMOYASU (JP)
Application Number:
PCT/JP2022/039707
Publication Date:
August 17, 2023
Filing Date:
October 25, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/739
Domestic Patent References:
| WO2018221032A1 | 2018-12-06 |
Foreign References:
| JP2004319624A | 2004-11-11 | |||
| JP2019169575A | 2019-10-03 | |||
| US20150091052A1 | 2015-04-02 | |||
| JP2012238715A | 2012-12-06 | |||
| JP2018046255A | 2018-03-22 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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