SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

WIPO Patent Application WO/2020/261385

A1

In the present invention, an emitter main terminal (3) is connected by a plurality of first bonding wires (15) and an emitter electrode surface (12) of a power semiconductor element (1). An emitter reference terminal (4) is connected by a second bonding wire (16) and the emitter electrode surface (12) of the power semiconductor element (1). A deteriorated location identification unit (9): references correspondence information related to a combination of a change over time of a first voltage, which is a difference between a potential of the collector main terminal (2) and that of the emitter main terminal (3), and a change over time of a second voltage, which is a difference between a potential of the emitter reference terminal (4) and that of the emitter main terminal (3), the correspondence information defining a deteriorated location among a plurality of bonding locations (20) of the emitter electrode surface (12) to which each of the plurality of first bonding wires (15) are connected; and identifies a deteriorated location that corresponds to the combination of the change over time of the first voltage measured by a first voltage measurement circuit (5) and the change over time of the second voltage measured by a second voltage measurement circuit (6).

WADA YUKIHIKO (JP)

PCT/JP2019/025170

December 30, 2020

June 25, 2019

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MITSUBISHI ELECTRIC CORP (JP)

H01L23/58; G01R31/28; H01L25/07; H01L25/18

WO2016084241A1

2016-06-02

JP2013206997A

2013-10-07

FUKAMI PATENT OFFICE, P.C. (JP)

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