SEMICONDUCTOR DEVICE PRODUCTION METHOD EMPLOYING SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP

Title:

SEMICONDUCTOR DEVICE PRODUCTION METHOD EMPLOYING SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP

Document Type and Number:

WIPO Patent Application WO/2019/082934

Kind Code:

A1

Abstract:

[Problem] To provide a semiconductor device production method employing a resist underlayer film-forming composition that has a high etching rate and that can be removed with a chemical solution after substrate processing. [Solution] Disclosed is a semiconductor device production method comprising a step (G) wherein, after transferring an underlayer by employing a resist underlayer film-forming composition including a hydrolysis condensation product obtained by hydrolyzing and condensing a hydrolyzable silane in a non-alcohol solvent in the presence of a strong acid, a patterned resist film, a patterned resist underlayer film and/or particles are/is removed with a sulfuric acid peroxide mixture (SPM) made by mixing a hydrogen peroxide solution and sulfuric acid and/or an ammonia hydrogen peroxide mixture (SC1) made by mixing a hydrogen peroxide solution and ammonia water. The hydrolyzable silane includes a hydrolyzable silane represented by formula (1): R1 aR2 bSi(R3)4-(a+b). (In formula (1), R1 represents an organic group including a primary amino group, a secondary amino group, or a tertiary amino group, and is bonded to the silicon atom by a Si-C bond.) The hydrolysis condensation product includes an organic group including a salt structure between a counter anion originating from the strong acid and a counter cation originating from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

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Inventors:

SHIBAYAMA WATARU (JP)
HATTORI HAYATO (JP)
ISHIBASHI KEN (JP)
NAKAJIMA MAKOTO (JP)

Application Number:

PCT/JP2018/039514

Publication Date:

May 02, 2019

Filing Date:

October 24, 2018

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Assignee:

NISSAN CHEMICAL CORP (JP)

International Classes:

G03F7/26; C08G77/388; G03F7/11

Domestic Patent References:

WO2010021290A1	2010-02-25
WO2016080217A1	2016-05-26

Foreign References:

JP2017120359A

2017-07-06

Attorney, Agent or Firm:

HANABUSA PATENT & TRADEMARK OFFICE (JP)

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